Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families of and silicon MOSFETs, IGBTs, Gallium Nitride HEMTs, and Silicon Carbide MOSFETs as well as such as Easy, Econo power modules, require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Our EiceDRIVER™ gate drivers provide advanced features such as integrated bootstrap diode(BSD), over current protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot through protection, active miller clamp, active shutdown, separate sink and source outputs, short circuit clamping, soft shutdown, two level turn off, galvanic isolation(functional, basic and reinforced), etc.

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High-voltage power gate drivers from target low- to mid-power applications and can be used in end products like white goods, lighting ballasts, and industrial applications, such as motor control. These high-voltage, high-side, and low-side drivers are specified over a wide temperature range (-40°C.

The IRS2453(1)D is based on the popular IR2153 self-oscillating half-bridge gate driver IC, and incorporates a high voltage full-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer.